Description: Transport in Metal-Oxide-Semiconductor Structures Please note: this item is printed on demand and will take extra time before it can be dispatched to you (up to 20 working days). Mobile Ions Effects on the Oxide Properties Author(s): Hamid Bentarzi Format: Paperback Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, Germany Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K ISBN-13: 9783642266881, 978-3642266881 Synopsis This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.
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Location: Aldershot
End Time: 2025-01-26T17:11:54.000Z
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Book Title: Transport in Metal-Oxide-Semiconductor Structures
Number of Pages: 106 Pages
Publication Name: Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties
Language: English
Publisher: Springer-Verlag Berlin AND Heidelberg Gmbh & Co. KG
Item Height: 235 mm
Subject: Engineering & Technology, Chemistry
Publication Year: 2013
Type: Textbook
Item Weight: 195 g
Subject Area: Material Science
Author: Hamid Bentarzi
Item Width: 155 mm
Series: Engineering Materials
Format: Paperback
